NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

A capacity of a nitride semiconductor laser element is remarkably reduced and a requirement of high-speed response can be met. In the nitride semiconductor laser element, on a major plane of a substrate (101), an n-type semiconductor layer, an activation layer (205) and a p-type semiconductor layer, all of which are made of nitride, are stacked, and a stripe-shaped ridge part (2) is formed on the p-type semiconductor layer. Semiconductor pn-junction in a peripheral area separated from the ridge part is destroyed by ion implantation to form an insulating region (1) for reducing the element capacity.