摘要 |
<P>PROBLEM TO BE SOLVED: To store information in an SRAM block in a nonvolatile way, as regards a method for using a semiconductor integrated circuit provided with the SRAM block and the semiconductor integrated circuit. <P>SOLUTION: The conductance of one pulldown transistor is varied by making drain current flow to the one pulldown transistor between a pair of pulldown transistors constituting at least one SRAM for nonvolatile information storage among a plurality of SRAM cells. <P>COPYRIGHT: (C)2006,JPO&NCIPI |