| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which has small characteristic deterioration by reducing stress and suppressing a Vth shift caused by the positive electric charge of nitrogen by controlling peak nitrogen density in an oxide film in nitriding processing for the oxide film of a trench inner wall by a trench separating method (STI) since the (STI) has new problems such that a leak current is generated owing to the stress of an oxide film of a trench inner wall, and the threshold (Vth) of a transistor shifts by the influence of positive electric charge by nitrogen when the oxide film of the inner wall is nitrified to reduce stress applied to a silicon substrate and nitrogen density is too high, and then a leak current caused by a decrease in threshold increases to deteriorate hold characteristics of a DRAM. <P>SOLUTION: Disclosed is the method for manufacturing the semiconductor device which has small characteristic deterioration by reducing the stress and suppressing the Vth shift caused by the positive electric charge of nitrogen by controlling and optimizing the peak nitrogen density in the oxide film in nitriding processing for the oxide film of the trench inner wall. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
