CARBON DOPED SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICES, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a p-type conductive carbon doped semiconductor film of high-carrier concentration that is obtainable without performing electron irradiation or annealing, a semiconductor element using this, and manufacturing methods therefor.

SOLUTION: The carbon doped semiconductor film 1 is made of a film obtained by doping carbon onto a (1-101) surface 21 that is a nitrogen surface in a nitride semiconductor 2 formulated by a general expression of InxGayAlzN (wherein x+y+z=1, 0≤x≤1, 0≤y≤1, and 0≤z≤1). Further, this carbon doped semiconductor film 1 is used to manufacture a semiconductor element.

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