| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing an organo-polysiloxane membrane capable of efficiently removing the organo-polysiloxane membrane deposited on a base material and a deposition system. SOLUTION: The method for removing the organo-polysiloxane membrane 2' which removes the organo-polysiloxane membrane 2' deposited on the base material by plasma etching has an oxidation process of forming an Si-O bond by cutting at least a part of the Si-C bond of the organo-polysiloxane membrane 2' and an etching process of etching the organo-polysiloxane membrane 2' oxidized by supplying a cleaning gas to the atmosphere where the base material comes into contact and generating the plasma. The treatment for oxidizing the organo-polysiloxane membrane 2' includes an oxygen plasma treatment etc. Also, a fluorine-based gas, etc., are used as the cleaning gas. COPYRIGHT: (C)2006,JPO&NCIPI
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