| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal pulling device capable of controlling the temperature distribution in a crystal side radial direction in a single crystal silicon with a simple structure and without deteriorating an essential function of a radiation shield and capable of manufacturing a high quality single crystal even if pulling is quickened. SOLUTION: The single crystal pulling device is mounted with a reflection plate consisting of a high reflectivity member and whose section is a concave shape and a ring shape at the inside of the radiation shield used for pulling the single crystal in a Czockralski method. COPYRIGHT: (C)2006,JPO&NCIPI
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