发明名称 |
System and method for forming a semiconductor with an analog capacitor using fewer structure steps |
摘要 |
A method for manufacturing a semiconductor device that comprises forming an oxide layer over a substrate. A polysilicon layer is disposed outwardly from the oxide layer, wherein the polysilicon layer forms a floating gate. A PSG layer is disposed outwardly from the polysilicon layer and planarized. The device is pattern etched to form a capacitor channel, wherein the capacitor channel is disposed substantially above the floating gate formed from the polysilicon layer. A dielectric layer is formed in the capacitor channel disposed outwardly from the polysilicon layer. A tungsten plug operable to substantially fill the capacitor channel is formed.
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申请公布号 |
US2005221595(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050145460 |
申请日期 |
2005.06.02 |
申请人 |
KHAN IMRAN M;HUTTER LOUIS N;TODD JAMES B;MITROS JOZEF C;NEHRER WILLIAM E |
发明人 |
KHAN IMRAN M.;HUTTER LOUIS N.;TODD JAMES B.;MITROS JOZEF C.;NEHRER WILLIAM E. |
分类号 |
H01L21/28;H01L21/336;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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