| 发明名称 |
Strained-semiconductor-on-insulator device structures with elevated source/drain regions |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. |
| 申请公布号 |
US2005218453(A1) |
申请公布日期 |
2005.10.06 |
| 申请号 |
US20050125507 |
申请日期 |
2005.05.10 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
LANGDO THOMAS A.;CURRIE MATTHEW T.;HAMMOND RICHARD;LOCHTEFELD ANTHONY J.;FITZGERALD EUGENE A. |
| 分类号 |
H01L21/20;H01L21/331;H01L21/336;H01L21/337;H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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