OPTOELECTRONIC HIGH FREQUENCY MODULATOR INTEGRATED ON SILICON
摘要
<p>The invention concerns an optoelectronic component designed to control an optical signal comprising a wave microguide ridged in a silicon-on-insulator (SOI) type substrate and an active zone characterized in that said active zone consists of a plurality of very thin silicon layers either type N<+> doped or type P<+> doped ( delta -doping), said zone being arranged between a N<+>doped zone and a P<+>doped zone forming an PIN diode, connected to two electrodes arranged on either side of said active zone enabling the structure to be polarized. The invention also concerns a method for making an optoelectronic component. The invention further concerns the use of an optoelectronic component to produce an optoelectronic switch, as well as the use of an optoelectronic component to produce an optoelectronic modulator.</p>
申请公布号
WO2005093480(A1)
申请公布日期
2005.10.06
申请号
WO2005FR00748
申请日期
2005.03.29
申请人
UNIVERSITE PARIS-SUD;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE -CNRS-;LAVAL, SUZANNE;MARRIS, DELPHINE;CASSAN, ERIC;PASCAL, DANIEL
发明人
LAVAL, SUZANNE;MARRIS, DELPHINE;CASSAN, ERIC;PASCAL, DANIEL