| 发明名称 |
Process for joining at least two semiconductor substrates used in semiconductor manufacture comprises moving a radiation source relative to a bonding surface during pretreatment |
| 摘要 |
<p>Process for joining at least two semiconductor substrates (1) comprises moving a radiation source (3) relative to a bonding surface (1a) during pretreatment. An independent claim is also included for a device for pretreating bonding surfaces before bonding.</p> |
| 申请公布号 |
DE102004008699(B3) |
申请公布日期 |
2005.10.06 |
| 申请号 |
DE20041008699 |
申请日期 |
2004.02.23 |
| 申请人 |
SUESS MICROTEC LITHOGRAPHY GMBH |
发明人 |
KAPITZA, HANS-GEORG;HANSEN, SVEN |
| 分类号 |
H01L21/18;H01L21/48;H01L21/58;H01L27/12;(IPC1-7):H01L21/58 |
主分类号 |
H01L21/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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