| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high performance stacked photoelectric conversion device, capable of offering increased flexibility of the manufacturing step and improving the manufacturing efficiency. <P>SOLUTION: The stacked photoelectric convering device includes a plurality of photoelectric conversion units formed by a conductivity type layer, a substantially intrinsic-semiconductor photoelectric converting layer, and a reverse conductivity type layer arranged in this order as seen from a light incident side with a plasma CVD method. The method for manufacturing the stacked photoelectric converting device comprises the steps of forming a conductivity layer, partially having at least a silicon composite lamination with a silicon crystal phase mixed in an amorphous alloy of silicon and oxigen to one or both of a conductivity layer in the reverse conductivity layer in a front photoelectric converting unit, arranged in the light incident side and the one conductivity type layer in a rear photoelectric converting unit arranged adjacent in a rear side of the front photoelectric converting unit. The method further comprises the steps of once taking out a part of the silicon composite layer in the atmosphere, after being formed, exposing the outermost surface of the silicon composite layer, and forming a remaining silicon composite layer of the same conductivity type. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
