发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To make protection function reinforcement and high-speed recording compatible in a semiconductor memory device having a copyright protection function. <P>SOLUTION: The semiconductor memory device is provided with a nonvolatile memory 105 such as a ferroelectric memory allowing high-speed writing rather than that of a flush memory 113 to increase frequency of mutual authentication done together with the transmission/recording of content to and on the semiconductor memory device 119 from a host device 100. The flush memory 113 is used as the main storage memory of the semiconductor memory device 119. Temporal overhead required for updating and recording content protection information in a mutual authentication mode is made short even when the frequency of the mutual authentication for the content function reinforcement is increased for recording the content protection information (title key management information 106, a title key 107) updated and recorded in the mutual authentication mode on the nonvolatile memory 105. As a result, the reinforcement of the contents protection function and the high-speed recording are compatible with each other. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005275654(A) 申请公布日期 2005.10.06
申请号 JP20040086241 申请日期 2004.03.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKANISHI MASAHIRO;OKI SHUICHI;SO HIROKAZU;IZUMI TOMOAKI;KASAHARA TETSUSHI;TAMURA KAZUAKI;MATSUNO KIMINORI;INOUE MANABU
分类号 G06F21/24;G06F12/14;G10K15/02;G10L19/00;(IPC1-7):G06F12/14 主分类号 G06F21/24
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