ELECTRON SOURCE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an electron source and its manufacturing method in which electron emission property and electrical property as well as stability with the passage of time can be improved compared with a conventional one evin if the distribution of electron emitting angle is made smaller.

SOLUTION: A lower electrode 12 is formed on one surface of an insulating substrate 11 (fig.(a)), and a first polycrystalline silicon layer 3 is formed on the lower electrode 12. The surface of the first polycrystalline silicon layer 3 is smoothed by grinding (fig.(c)) and a second polycrystalline silicon layer 4 is formed on the first polycrystalline silicon layer 3 by CVD method (fig.(d)). By nano-crystallizing the second polycrystalline silicon layer 4 and forming an insulating film on respective surface of a large number of silicon crystallites of nanometer order, an intense-field drift layer 6 is formed (fig.(e)). After that, a surface electrode 7 made of a gold thin film is formed on the intense-field drift layer 6 by vapor deposition method or the like (fig.(f)).

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