发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which allows high density, high integration, and cost reduction to be promoted, and high-speed operation to be further performed with high reliability and with low noise, by forming a pad, a bump, and wiring on a surface provided with the pad of the semiconductor device. <P>SOLUTION: Power supply wirings 1003a, ground wirings 1003b, and signal wirings 1003c are formed in the same plane, and the power supply wirings or the ground wirings is formed adjacent to both sides of at least a portion of the signal wirings. This reduces the total effective inductance, by enlarging the mutual inductance among the power supply wirings 1003a, and the ground wirings 1003b and the signal wirings 1003c. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005277429(A) 申请公布日期 2005.10.06
申请号 JP20050115227 申请日期 2005.04.13
申请人 HITACHI LTD 发明人 SHIMIZU HIROYA;NISHIMURA ASAO;MIYAMOTO TOSHIO;TANAKA HIDEKI;MIURA HIDEO
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L27/04;(IPC1-7):H01L21/822;H01L21/320 主分类号 H01L23/52
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