| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved apparatus for introducing an etching gas into a plasma etching apparatus. SOLUTION: A plasma reactor apparatus includes a plasma reaction chamber (1); a chuck (42) equipped with a front portion and a rear portion, the chuck is provided, such that its front portion hold a wafer to be treated; a heating element 7 provided so as to heat the chuck; and a vacuum state generating means (21) for generating a vacuum state around the chuck to thermally isolate it apart from a chamber, wherein the vacuum state generating means includes a rear chamber (48) existing in the same space as that of the rear portion of the chuck, further includes a vacuum generator (21) which turns the rear chamber into a vacuum state. By means of such a structure, uniformity of heat of the wafer can be obtained. COPYRIGHT: (C)2006,JPO&NCIPI |
