Transistor structure having an oxidation inhibition layer and method of forming the same

摘要

A transistor structure and a method of forming the same prevent a boundary face of first and second gate electrodes from being oxidized in a subsequent oxidation process, by forming an oxidation inhibition layer in the boundary face. A gate insulation layer is formed on a semiconductor substrate, and a gate stack is obtained by a sequential accumulation of first and second gate electrodes and a capping layer on the gate insulation layer. An oxidation inhibition layer is formed in a sidewall portion of the gate stack, and the oxidation inhibition layer covers a boundary face of the first and second gate electrodes. Source/drain regions are opposite to the gate stack.