发明名称 Data output circuit with improved overvoltage/surge protection
摘要 A data output circuit is composed of first and second differential MOS transistors, first and second cascade MOS transistors, first and second outputs, and first and second resistor elements. The first and second differential MOS transistors receive first and second input voltages on the gates, respectively, sources of the differential MOS transistors being commonly connected. The first cascade MOS transistor is connected between the first differential MOS transistor and the first output, and the second cascade MOS transistor is connected between the second differential MOS transistor and the second output, gates of the first and second cascade MOS transistors being commonly connected. The first transistor element is connected between a ground line and the commonly connected gates, and the second transistor element is connected between a power supply line and the commonly connected gates.
申请公布号 US2005218935(A1) 申请公布日期 2005.10.06
申请号 US20050090795 申请日期 2005.03.25
申请人 NEC ELECTRONICS CORPORATION 发明人 WATARAI SEIICHI
分类号 H03K19/003;H03K17/08;H03K17/0812;H03K17/0814;H03K17/10;H03K17/687;H03K19/0175;H03K19/0185;H03K19/094;H04L25/02;(IPC1-7):H03K19/017 主分类号 H03K19/003
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