| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which allows storage information to be read at high speed. SOLUTION: This device has a memory cell transistor and a peripheral circuit transistor. The memory cell transistor is provided with a source region, a drain region, and a channel region, a first and second gate electrode which are located on the channel region, a first gate insulating layer (129) formed between the channel region and the first gate electrode, and a charge-storage region (135) formed between the channel region and the second gate electrode, in a memory cell forming region of a semiconductor substrate. The gate electrodes (139,140) of the peripheral circuit transistor consists of a laminated layer, laminated with the first gate electrode and a first conductive film of the same layer, and the second gate electrode and a second conductive film of the same layer. COPYRIGHT: (C)2006,JPO&NCIPI
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