| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ceramic susceptor which can remarkably reduce the number of metal atoms at the semiconductor surface after treatment, for example, up to 1×10<SP>10</SP>atoms/cm<SP>2</SP>or less. <P>SOLUTION: In the ceramic susceptor 2 having a semiconductor setting surface 2a, the number of atoms of each metal except for metal atoms forming ceramics is 1×10<SP>11</SP>atoms/cm<SP>2</SP>or less at the semiconductor setting surface 2a. Moreover, in the method for cleaning the ceramics susceptor 2 having the semiconductor setting surface 2a, a complexing agent to form a complex with the metal atom is used for the cleaning process. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
