| 摘要 |
PROBLEM TO BE SOLVED: To attain initialization of a memory circuit by supply of one bit setting input of one initializing bit signal. SOLUTION: The initializing signal to each storage element circuit of the memory circuit is supplied by one signal line 14, and a pMOS 00-1, in which a source electrode is connected to a high power source Vdd by the initializing signal, is transferred to the ON state. By this transfer, an input of an inverter 00-3 and an output of an inverter 00-4 are stabilized to a high level voltage ("1"), and an output of the inverter 00-3 and an input of the inverter 00-4 are stabilized to a low level voltage ("0"). These voltages are applied to gate electrodes of an nMOS 00-6 connecting the source electrode to a low power source Vss and of an nMOS 00-7 connecting the source electrode to a high power source Vdd. Since the nMOS 00-6 becomes the ON state and the nMOS 00-7 becomes the OFF state, drain electrodes connected each other become the low level voltage ("0"). COPYRIGHT: (C)2006,JPO&NCIPI
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