SOLID PHASE FLUX EPITAXY GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solid phase flux epitaxy growth method by which a thin film having crystalline completeness comparable with a bulk crystal can be produced at a low production cost. SOLUTION: An amorphous thin film comprising the aimed substance and a flux of a substance which produces a eutectic with the aimed substance but no compound is deposited on a substrate at a low temperature, and the substrate is heat treated at a temperature at the eutectic temperature of the aimed substance and the flux or higher and lower than the lower melting point of the aimed substance or of the flux. The aimed substance mixes with the flux by solid phase reaction, that is, solid phase diffusion to produce a liquid phase of the eutectic, from which a crystal is epitaxially grown. COPYRIGHT: (C)2006,JPO&NCIPI