| 摘要 |
The invention comprises a charge pump is configured to receive the external voltage level and generate a high voltage level, wherein the high voltage level is higher than the external voltage level. A memory control circuit is configured to receive the external voltage level and the high voltage level, and to select between and provide them. A memory array, with a word line and a bit line, is configured to receive the external and high voltage levels at the word line and the high voltage levels at the bit line. A word line driver is configured to provide the external and high voltage levels to the word line. A bit line selector is configured to select the bit line and receive the high, external, and regulated voltage levels. A bit line driver is configured to provide the external voltage levels to the bit line selector.
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