发明名称 SILICON GROUP THIN FILM SOLAR BATTERY FORMED ON TRANSPARENT CONDUCTIVE FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a silicon group thin film solar battery with a high efficiency at low cost by establishing the compatibility between a short-circuit current density Jsc and an open voltage Voc of the solar battery on a transparent conductive film for maintaining a high haze rate and a high transparency characteristic. <P>SOLUTION: The silicon group thin film solar battery comprising a semiconductor layer of one-conduction type, a photoelectric conversion layer, a semiconductor layer of the other conduction type, and a back electrode layer located on a transparent substrate with a transparent conductor film attached thereto, the haze rate of the transparent conductive film being selected to be 18% or over, and the forming temperature of the semiconductor layer of one conduction type being selected to be 180°C or below, includes a heating step at the forming temperature under about the atmospheric pressure after the forming of the back electrode layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005277200(A) 申请公布日期 2005.10.06
申请号 JP20040089936 申请日期 2004.03.25
申请人 KANEKA CORP 发明人 SAWADA TORU;YAMAMOTO KENJI
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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