摘要 |
PROBLEM TO BE SOLVED: To obtain a high-integration, high-speed optical input memory, and a field effect transistor which realizes a high-sensitivity optical sensor. SOLUTION: A quantum dot field effect transistor comprises a tunnel SiO<SB>2</SB>film provided on a Si layer, a multi-stage quantum dot layer 204 of at least two, alternately-stacked layers of a Si quantum dot layer a SiO<SB>2</SB>film provided on the tunnel SiO<SB>2</SB>film, a high-dielectric-constant insulating layer 206 provided on the multi-stage quantum dot layer, an impurity semiconductor provided on the high-dielectric-constant insulating layer, and a gate electrode layer made of a semi-transparent metal. COPYRIGHT: (C)2006,JPO&NCIPI |