发明名称 |
Device-level address translation within a programmable non-volatile memory device |
摘要 |
A programmable non-volatile memory device includes block switching logic that enables device-level translation rules to be changed. The device-level translation rules map the external addresses received by the flash memory device to the internal addresses of the programmable non-volatile memory device. Because the device-level translation rules are changeable, the physical location in the programmable non-volatile memory device to which an external address maps can be changed in a manner that is transparent to off-device operations. By allowing device-level translation rules to be changed, block management functions can be accomplished within the programmable non-volatile memory device itself.
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申请公布号 |
US2005223186(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050090594 |
申请日期 |
2005.03.25 |
申请人 |
BELEVICH ARTEM;BALAKRISHNAN THIRUMALPATHY |
发明人 |
BELEVICH ARTEM;BALAKRISHNAN THIRUMALPATHY |
分类号 |
G06F12/02;G06F12/08;(IPC1-7):G06F12/08 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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地址 |
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