METHOD FOR MAKING A FIELD-EFFECT TRANSISTOR WITH DIAMOND-LIKE CARBON CHANNEL AND RESULTING TRANSISTOR

摘要

The invention concerns a field-effect transistor comprising a source (10) and a drain (11) connected via a channel (7) controlled by a gate electrode (5) separated from the channel (7) by an gate insulator (3). The channel (7) is made of a diamond-like carbon layer. The method for making the transistor comprises successively: depositing a diamond-like carbon layer on a substrate (2), depositing a gate insulating layer (3) and depositing at least one conductive layer (4). The conductive layer (4) is etched so as to form the gate electrode (5). Then an insulating material is deposited on flanks of the gate electrode (5) to form an insulating side (6). The gate insulating layer (3) is etched and the diamond-like carbon layer is etched so as to define the channel (7). Then, a semiconductor material designed to form the source (10) and a semiconductor material designed to form the drain (11) are deposited on either side of the channel (7).