发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>Wafer contamination is prevented, while preventing breakage of a high frequency electrode and a susceptor. A main body (41) of the susceptor (40) of MMT equipment is composed of a heater arranging plate (42), an electrode arranging plate (48) and a holding plate (56), all of which are made of quartz. On an upper plane of the electrode arranging plate (48), a circular electrode arranging hole (49) having a fixed depth is concentrically buried, and on a bottom plane of the electrode arranging hole (49), quadrangular pillars (50) are protruded in matrix. A plurality of inserting holes (52) are made on a disk-shaped high frequency electrode (51), and the high frequency electrode (51) is arranged in the electrode arranging hole (49) by inserting each pillar part (50) into each inserting hole (52). Spaces Sa and Sb are provided between the high frequency electrode (51) and the electrode arranging plate (48). The strength of the electrode arranging plate (48) can be reinforced by the pillar part (50). Even when a thermal expansion coefficient of the high frequency electrode is higher than that of the electrode arranging plate, breakage of the high frequency electrode can be prevented, since a thermal expansion difference can be absorbed by the spaces.</p>
申请公布号 WO2005093806(A1) 申请公布日期 2005.10.06
申请号 WO2005JP03730 申请日期 2005.03.04
申请人 HITACHI KOKUSAI ELECTRIC INC.;ISHISAKA, MITSUNORI;MIYATA, TOSHIMITSU 发明人 ISHISAKA, MITSUNORI;MIYATA, TOSHIMITSU
分类号 H01J37/32;H01L21/00;H01L21/31;H01L21/683;H05H1/46;(IPC1-7):H01L21/31 主分类号 H01J37/32
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