SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To prevent the deterioration of characteristics of a single crystal Si thin film transistor formed by separating at an ion pouring layer by heating the single Si substrate after pouring hydrogen ion or He iron into the single crystal Si substrate.

SOLUTION: In the semiconductor device constituted of an insulating substrate 50 and a thin film device formed on the insulating substrate 50, a thin film transistor consisting of non-single crystal Si thin film and another thin film transistor consisting of single crystal Si are mixed in the semiconductor device while the gate electrode film 35 of the thin film transistor consisting of the single crystal Si is constituted of a material containing a metal, larger in the amount of weight than that of silicon, or the compound thereof.

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