| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic field effect transistor in which leakage current and temporal deterioration of mobility are suppressed and stability is improved. SOLUTION: In the organic field effect transistor 1 provided with an organic semiconductor layer 4, and a source electrode 2 and a drain electrode 3, which are bonded to the organic semiconductor layer 4, ohmic bonding faces 8A and 9A and Schottky bonding faces 8B and 9B are formed in bonding faces 8 and 9 with the organic semiconductor layer 4 and the source electrode 2 or the drain electrode 3. COPYRIGHT: (C)2006,JPO&NCIPI |
