发明名称 |
METHOD OF FORMING LaNiO3 CONDUCTIVE LAYER, FERROELECTRIC DEVICE WITH LaNiO3 LAYER, AND PRECURSOR FORMING SOLUTION |
摘要 |
PROBLEM TO BE SOLVED: To form a LaNiO<SB>3</SB>layer having good resistivity and a surface form suitable for connection to a ferroelectric material at low cost. SOLUTION: A method of forming a lanthanum nickel oxide (LaNiO<SB>3</SB>) layer as well as producing a precursor forming solution together with a device made of such a solution is disclosed. A method of producing the forming solution using lanthanum, nickel, and diol is also disclosed. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005277412(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20050077459 |
申请日期 |
2005.03.17 |
申请人 |
FUJITSU LTD |
发明人 |
LIU KUO-CHUAN;MICHAEL G LEE;YOKOUCHI KISHIO |
分类号 |
G02B6/12;B32B9/00;C01G53/00;C08H1/00;C23C18/12;G02F1/03;G02F1/055;H01L21/28;H01L21/288;(IPC1-7):H01L21/28 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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