发明名称 METHOD OF FORMING LaNiO3 CONDUCTIVE LAYER, FERROELECTRIC DEVICE WITH LaNiO3 LAYER, AND PRECURSOR FORMING SOLUTION
摘要 PROBLEM TO BE SOLVED: To form a LaNiO<SB>3</SB>layer having good resistivity and a surface form suitable for connection to a ferroelectric material at low cost. SOLUTION: A method of forming a lanthanum nickel oxide (LaNiO<SB>3</SB>) layer as well as producing a precursor forming solution together with a device made of such a solution is disclosed. A method of producing the forming solution using lanthanum, nickel, and diol is also disclosed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005277412(A) 申请公布日期 2005.10.06
申请号 JP20050077459 申请日期 2005.03.17
申请人 FUJITSU LTD 发明人 LIU KUO-CHUAN;MICHAEL G LEE;YOKOUCHI KISHIO
分类号 G02B6/12;B32B9/00;C01G53/00;C08H1/00;C23C18/12;G02F1/03;G02F1/055;H01L21/28;H01L21/288;(IPC1-7):H01L21/28 主分类号 G02B6/12
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