COMPLEX METAL HYDROXIDE SOLID SOLUTION AND ITS PRODUCTION METHOD, RESIN COMPOSITION CONTAINING THE SAME AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a complex metal hydroxide solid solution excellent in flame retardancy and acid resistance, capable of securing ionic impurity concentration required when used as a material for sealing a semiconductor, and a method for producing the same. SOLUTION: This complex metal hydroxide solid solution expressed by formula (1): Mg1-xZnx-y(OH)2-2y-ZnySny(OH)6y(wherein, 0.01≤x<0.5; 0.01x≤y≤0.5x) and excellent in flame retardancy and acid resistance is produced by mixing slurry of a solid solution of a zinc-containing metal hydroxide expressed by formula (2): Mg1-xZnx(OH)2(wherein 0.01≤x≤0.5) under agitation, holding to age the mixture at 60-90°C to react zinc in the vicinity of the crystal surface of the above-mentioned zinc-containing metal hydroxide with stannic acid, and coating the crystal surface with produced zinc hydroxystannate. COPYRIGHT: (C)2006,JPO&NCIPI