发明名称 Power semiconductor module
摘要 A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.
申请公布号 US2005218426(A1) 申请公布日期 2005.10.06
申请号 US20050142471 申请日期 2005.06.02
申请人 FUJI ELECTRIC CO., LTD. 发明人 KOBAYASHI TAKATOSHI;MIYASAKA TADASHI;YAMADA KATSUMI;MOROZUMI AKIRA
分类号 H01L23/12;H01L23/373;H01L25/07;H01L25/18;H02M7/00;(IPC1-7):H01L29/74 主分类号 H01L23/12
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