发明名称 Semiconductor device and manufacturing method thereof
摘要 A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
申请公布号 US2005221542(A1) 申请公布日期 2005.10.06
申请号 US20040917441 申请日期 2004.08.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN
分类号 G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):H01L31/039 主分类号 G02F1/136
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