发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.
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申请公布号 |
US2005221547(A1) |
申请公布日期 |
2005.10.06 |
申请号 |
US20050094782 |
申请日期 |
2005.03.31 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
YAMAUCHI SHOICHI;YAMAGUCHI HITOSHI;MAKINO TOMOATSU;NOGAMI SYOUJI;YAMAOKA TOMONORI |
分类号 |
H01L29/06;H01L21/20;H01L21/205;H01L21/336;H01L21/338;H01L21/8234;H01L29/78;(IPC1-7):H01L21/338 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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