ESD PROTECTION FOR SEMICONDUCTOR PRODUCTS

摘要

Device (60) in Figure 3 has junctions (86) each with a lateral portion (90) and a second portion (92) extending upward toward the surface (12) from the lateral portion (90). The lateral portions (90), as illustrated in Figure 3, are more or less formed along a plane parallel with the surface (12). The upwardly extending portions (92) include characteristic curved edges of the diffusion fronts which are associated with the planar process. With the regions (80 and 82) each having relatively high net dopant concentrations of different conductivity types, each lateral junction portion (90) includes a relatively large sub region (96) which extends more deeply into the layer (10). When compared to other portions of the junctions (86), the subregions (96) are characterized by a relatively low breakdown voltage so that ESD current is initially directed vertically rather than laterally.