SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element including a transparent compound semiconductor substrate having a lattice constant not coherent with that of a compound semiconductor that projects light. A semiconductor light emitting element (10) is provided with a GaP substrate (1), an active layer (4), which is positioned at an upper part of the GaP substrate (1) and includes an n-type AlInGaP layer and a p-type AlInGaP layer, and an ELO layer (3), which is positioned between the GaP substrate (1) and the active layer (4) and is formed by epitaxial horizontal direction growth.