发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which contributes to a reliability improvement and a resistance reduction of a wiring structure. SOLUTION: A layer dielectric 41 including an aperture 42 is disposed on a semiconductor substrate. A wiring body layer 46 with Cu as a main component is buried in the aperture 42. A barrier film 44 is interposed between the layer dielectric 41 and the wiring body layer 46 inside the aperture 42. The barrier film 44 is mainly composed of a chemical compound of a predetermined metallic element and a constitutive element of the layer dielectric 41. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2005277390(A) |
申请公布日期 |
2005.10.06 |
申请号 |
JP20050027756 |
申请日期 |
2005.02.03 |
申请人 |
HANDOTAI RIKOUGAKU KENKYU CENTER:KK |
发明人 |
KOIKE JUNICHI;WADA MAKOTO;SHIBATA HIDEKI;SHIMIZU NORIYOSHI;TAKAHASHI SHINGO;NISHIKAWA SATORU;YOSHIMARU MASAKI;USUI TAKAKIMI;NASU ISATO |
分类号 |
H01L21/3205;H01L21/768;H01L23/48;H01L23/52;H01L23/532;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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