MANUFACTURING METHOD FOR SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor that has a small environmental load, wherein the control of a depth direction of an atom injected onto the surface of a substrate made of silicon and the like needs no acceleration or deceleration, in stages subsequent to ion extraction. SOLUTION: ECR equipment 12 is used to generate the multivalent ions of Fe, and an ion-separation electromagnet 20 is used to separate and select multivalent ions of desired valency from among various valence-different Fe multivalent ions generated so that they may be implanted into an Si substrate 22 to form aβ-FeSi2. COPYRIGHT: (C)2006,JPO&NCIPI