| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which is superior in film thickness uniformity between substrates. SOLUTION: There are provided a reaction tube 203 processing a wafer 200, an oxidation gas supply line 331 supplying an oxidation gas in the reaction tube 203, and a gettering gas supply line 332 supplying a gettering gas in the reaction tube 203. The oxidation gas supply line 331 and the gettering gas supply line 332 are provided separately respectively, and each gas is separately supplied in the reaction tube 203, respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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