| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of acquiring data on the life of a base film which will become a base layer of a high-k material insulation film, and eventually to provide a method of testing the life of a field effect transistor which uses the high-k material for a gate insulation film. SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in the base film 103 by using a semiconductor apparatus comprising a p-type substrate 102, the base film 103, a high-k film 104, and a gate electrode 105. The method comprises a negative bias application process of applying a negative bias to the gate electrode 105; and a data acquisition process wherein a change over time in leakage current flowing to the gate electrode 105 from the p-type substrate 102 via the base film 103 and the high-k film 104 is measured, and thereafter, the negative bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film of the base film 103. COPYRIGHT: (C)2006,JPO&NCIPI
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