| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein diffusion profile of impurities to be introduced to a substrate can be accurately controlled by selectively removing a natural oxide film. SOLUTION: After a gate electrode 5 is formed, a natural oxide film 10 that is adhered to a substrate 1 and the gate electrode 5 due to the formation of the gate electrode 5, is selectively removed by hydrogen treatment. A covering insulating film is piled up after the removal of the natural oxide film 10, so that the covering insulating film can be uniform in thickness. As a result, diffusion profile can be made uniform in the source/drain extension area that is formed by implanting ions to the substrate by means of the covering insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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