| 摘要 |
A reference voltage source circuit, which can generate a sufficiently low reference voltage and which can stably operate at temperatures above 80 degrees Celsius, is provided. The circuit comprises two MOS transistors with gates of equal temperature characteristics of threshold voltage but of different impurity concentrations. The difference of voltages between the gates and the sources of the two MOS transistors is obtained as the reference voltage. When the gates of two transistors are connected together, the source of one of the transistors is connected to the ground, the difference of voltage between the gate and the source of two transistors becomes the source voltage of the other one of the transistors, and this source voltage of the other one of the transistors becomes the reference voltage.
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