发明名称 Film-depositing target and preparation of phase shift mask blank
摘要 For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.
申请公布号 US2005217988(A1) 申请公布日期 2005.10.06
申请号 US20050093297 申请日期 2005.03.30
申请人 TOPPAN PRINTING CO., LTD. 发明人 YOSHIKAWA HIROKI;ISHIHARA TOSHINOBU;OKAZAKI SATOSHI;INAZUKI YUKIO;SAGA TADASHI;OKADA KIMIHIRO;IWAKATA MASAHIDE;HARAGUCHI TAKASHI;FUKUSHIMA YUICHI
分类号 G03F1/08;C23C14/06;C23C14/34;G03F1/00;G03F1/32;G03F1/54;G03F1/68;H01L21/027;(IPC1-7):C23C14/32 主分类号 G03F1/08
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