发明名称 |
HIGH RESPONSIVITY HIGH BANDWIDTH METAL-SEMICONDUCTOR-METAL OPTOELECTRONIC DEVICE |
摘要 |
An optical device for sensing an incident optical wave within a wavelength range includes a first array and a second array of electrodes superposed on a substrate, and a sensor connected to the contacts. The arrays are interdigitated. Each array includes its own parameters: contact width, contact thickness, groove width, and a groove dielectric constant. A structure associated with the arrays resonantly couples the incident wave and a local electromagnetic resonance or hybrid mode including at least a surface plasmon cavity mode (CM). For coupling the CM, an aspect ratio of contact thickness to spacing between electrodes is at least 1. A preferred structure for coupling a hybrid mode for high bandwidth and responsivity includes a higher dielectric constant in alternating grooves. The substrate may include silicon, including silicon-on-insulator (SOI). An SOI device having a alternating grooves with a higher dielectric, e.g., silicon oxide, provides .25 A/W and 30 GHz bandwidth. |
申请公布号 |
WO2005092037(A2) |
申请公布日期 |
2005.10.06 |
申请号 |
WO2005US09383 |
申请日期 |
2005.03.22 |
申请人 |
RESEARCH FOUNDATION OF THE CITY UNIVERSITY OF NEW;AREND, MARK;CROUSE, DAVID |
发明人 |
AREND, MARK;CROUSE, DAVID |
分类号 |
H01L27/12;H01L31/028;H01L31/0296;H01L31/0304;H01L31/108 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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