TEMPERATURE INSENSITIVE QUANTUM DOT LASERS AND PHOTONIC GAIN DEVICES HAVING PROXIMITY-PLACED ACCEPTOR IMPURITIES, AND METHODS THEREFOR

摘要

Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.