发明名称 |
Pin Photodiode |
摘要 |
A pin-photodiode has a semiconductor detector layer (3) with a small band gap with a p-doped zone under wider band-gap of a semiconductor mantle layer (4). The mantle (4) p-doped zone (7) has a detent (5) over the photodetection layer (3).
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申请公布号 |
EP1583157(A2) |
申请公布日期 |
2005.10.05 |
申请号 |
EP20050005879 |
申请日期 |
2005.03.17 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
REILL, WOLFGANG |
分类号 |
H01L31/105;(IPC1-7):H01L31/105 |
主分类号 |
H01L31/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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