摘要 |
In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom% of silicon and a plurality of metal elements, typically Mo and Zr or Hf. |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. |
发明人 |
YOSHIKAWA, HIROKI;ISHIHARA, TOSHINOBU;OKAZAKI, SATOSHI;INAZUKI, YUKIO;SAGA, TADASHI;OKADA, KIMIHIRO;IWAKATA, MASAHIDE;HARAGUCHI, TAKASHI;TAKAGI, MIKIO;FUKUSHIMA, YUICHI |