| 发明名称 |
Dissipation of a charge buildup on a wafer portion |
| 摘要 |
An apparatus in one example comprises a wafer portion that comprises a conduction layer. Upon exposure of the conduction layer during a etch of the wafer portion, the conduction layer serves to dissipate a portion of a charge buildup on the wafer portion during an etch of the wafer portion.
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| 申请公布号 |
EP1582500(A2) |
申请公布日期 |
2005.10.05 |
| 申请号 |
EP20050251082 |
申请日期 |
2005.02.24 |
| 申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
CHOI, YOUNGMIN A.;GEOSLING, CHRISTINE;ABBINK, HENRY |
| 分类号 |
B81B1/00;B81C1/00;H01L21/306;H01L21/3065;H01L21/8238;H05F3/00;(IPC1-7):B81C1/00 |
主分类号 |
B81B1/00 |
| 代理机构 |
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代理人 |
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