发明名称 Metal region for reduction of capacitive coupling between signal lines
摘要 A structure includes a substrate, first and second signal lines above the substrate, where unused substrate surface area exists between the first and second signal lines, and a first shield line in the unused substrate surface area. To define the first shield line, the signal line layout which includes the first and second signal lines is defined. Any areas which are not signal lines are then defined as unused areas of the substrate. The shield lines including the first shield line are then defined in portions of the unused areas of the substrate. In this manner, shield lines are automatically designed at every available location without requiring any allocation of substrate surface area.
申请公布号 US6951806(B1) 申请公布日期 2005.10.04
申请号 US19990452367 申请日期 1999.11.30
申请人 SUN MICROSYSTEMS, INC. 发明人 SCHWEIKERT DANIEL G.;MACDONALD JOHN F.
分类号 H01L21/338;H01L23/522;(IPC1-7):H01L21/976 主分类号 H01L21/338
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