Method and apparatus to generate a reference value in a memory array

摘要

An apparatus and method for generating a reference in a memory circuit are disclosed. At least two dummy bit-cells are used to generate a reference voltage. One cell has high value stored and the other has a low value stored. The cells are activated and discharged into respective bit-lines. The bit-lines are equalized during the discharge process to generate a reference that is approximately a mid point between a high value cell and a low value cell.